PMZ250UN,315 datasheet

О ДАТАШИТЕ

Маркировка

PMZ250UN,315
Производитель

NXP Semiconductors
Описание

NXP Semiconductors PMZ250UN,315 Configuration: Single Continuous Drain Current: 2.28 A Current - Continuous Drain (id) @ 25?° C: 2.28A Drain To Source Voltage (vdss): 20V Drain-source Breakdown Voltage: 20 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 0.89nC @ 4.5V Gate-source Breakdown Voltage: +/- 8 V ID_COMPONENTS: 1950396 Input Capacitance (ciss) @ Vds: 45pF @ 20V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Power - Max: 2.5W Power Dissipation: 2500 mW Rds On (max) @ Id, Vgs: 300 mOhm @ 200mA, 4.5V Resistance Drain-source Rds (on): 0.3 Ohm @ 4.5 V Series: TrenchMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 950mV @ 250?µA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 20 V Gate-Source Breakdown Voltage: +/- 8 V Resistance Drain-Source RDS (on): 0.3 Ohms Fall Time: 5 ns Rise Time: 10 ns Factory Pack Quantity: 10000 Typical Turn-Off Delay Time: 18.5 ns Part # Aliases: PMZ250UN T/R Other Names: 934060157315, PMZ250UN T/R
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13 шт.
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